RFP2N08

Features: • 2A, 80V and 100V• rDS(ON) 1.05W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Majority Carrier Device• Related Literature- TB334 Guidelines for Soldering Surface Mo...

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SeekIC No. : 004476619 Detail

RFP2N08: Features: • 2A, 80V and 100V• rDS(ON) 1.05W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance&...

floor Price/Ceiling Price

Part Number:
RFP2N08
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• 2A, 80V and 100V
• rDS(ON) 1.05W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"



Specifications

  RFP2P08 RFP2P10 UNITS
Drain to Source Voltage (Note 1) VDSS 80 100 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 80 100 V
Continuous Drain Current ID 2 2 A
Pulsed Drain Current (Note 3) IDM 5 5 A
Gate to Source Voltage VGS ±20 ±20 V
Maximum Power Dissipation PD 25 25 W
Linear Derating Factor 0.2 0.2 W/o Caaa
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Maximum Temperature for Soldering      
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 260 o C



Description

These are N-channel enhancement mode silicon gate power field effect transistors RFP2N08 designed for applications such
switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFP2N08 can be operated directly from integrate circuits.




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