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RFP2N10L

MOSFET TO-220AB N-Ch Power

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SeekIC No. : 00165844 Detail

RFP2N10L: MOSFET TO-220AB N-Ch Power

RFP2N10L Data Sheet

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Part Number:
RFP2N10L
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 1.05 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 10 V
Resistance Drain-Source RDS (on) : 1.05 Ohms
Continuous Drain Current : 2 A


Features:

• 2A, 80V and 100V
• rDS(ON) = 1.050W
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Voltage (Note 1). . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 1MW) (Note 1) . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . ..ID
Pulsed Drain Current (Note 3). . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . .PD
Derate above 25oC . . . . . . . . . . . . . . . . .
Operating and Storage Temperature. . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . .. TL
Package Body for 10s, See Techbrief 334 . . . . . . Tpkg		 RFP15N08L
80
80
±10
15
40
72
0.48
-55 to 175
300
260		 UNITS
V
V
V
A
A
W
W/oC
o C
o C
o C



Parameters:

Technical/Catalog InformationRFP2N10L
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C2A
Rds On (Max) @ Id, Vgs1.05 Ohm @ 2A, 5V
Input Capacitance (Ciss) @ Vds 200pF @ 25V
Power - Max25W
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names RFP2N10L
RFP2N10L



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