Features: • 2A, 120V• rDS(ON) = 1.750W• Design Optimized for 5V Gate Drives• Can be Driven Directly from QMOS, NMOS, TTL Circuits• Compatible with Automotive Drive Requirements• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Tr...
RFP2N12L: Features: • 2A, 120V• rDS(ON) = 1.750W• Design Optimized for 5V Gate Drives• Can be Driven Directly from QMOS, NMOS, TTL Circuits• Compatible with Automotive Drive Requ...
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| RFP2P20 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 120 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 120 | V |
| Continuous Drain Current ID | 2 | A |
| Pulsed Drain Current (Note 3) IDM | 5 | A |
| Gate to Source Voltage VGS | ±20 | V |
| Maximum Power Dissipation PD | 25 | W |
| Linear Derating Factor | 0.2 | W/o Caaa |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | o C |