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RFP2N15

Features: • 2A, 120V and 150V• rDS(ON) = 1.750W• Related Literature- TB334 Guidelines for Soldering Surface Mount Components to PC Boards Specifications RFP2N12 RFP2N15 UNITS Drain to Source Voltage (Note 1) VDSS 120 150 V Drain to Gate Voltage (RGS = 1MW) (Not...

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RFP2N15: Features: • 2A, 120V and 150V• rDS(ON) = 1.750W• Related Literature- TB334 Guidelines for Soldering Surface Mount Components to PC Boards Specifications RFP2N12 RFP2N15 U...

RFP2N15 Data Sheet

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Part Number:
RFP2N15
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• 2A, 120V and 150V
• rDS(ON) = 1.750W
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

  RFP2N12 RFP2N15 UNITS
Drain to Source Voltage (Note 1) VDSS 120 150 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 120 150 V
Continuous Drain Current ID 2 2 A
Pulsed Drain Current (Note 3) IDM 5 5 A
Gate to Source Voltage VGS ±20 ±20 V
Maximum Power Dissipation PD 25 25 W
Linear Derating Factor 0.2 0.2 W/o Caaa
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Maximum Temperature for Soldering      
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 260 o C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFP2N15 designed for applications such
as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFP2N15 can be operated directly from integrated circuits.




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