MOSFET TO-220
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V |
| Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 2 A |
| Resistance Drain-Source RDS (on) : | 3.5 Ohms | Configuration : | Single |
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
| Package / Case : | TO-220AB |
| RFP2P20 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 200 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 200 | V |
| Continuous Drain Current ID | 2 | A |
| Pulsed Drain Current (Note 3) IDM | 5 | A |
| Gate to Source Voltage VGS | ±20 | V |
| Maximum Power Dissipation PD | 25 | W |
| Linear Derating Factor | 0.2 | W/o Caaa |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | o C |