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RFP50N05

Features: • 50A, 50V• rDS(ON) = 0.022W• UIS Rating Curve (Single Pulse)• 175oC Operating TemperatureSpecifications RFG50N05, RFP50N05 UNITS Drain to Source Voltage (Note 1) VDSS 50 V Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 50 V Continuous Drain C...

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SeekIC No. : 004476645 Detail

RFP50N05: Features: • 50A, 50V• rDS(ON) = 0.022W• UIS Rating Curve (Single Pulse)• 175oC Operating TemperatureSpecifications RFG50N05, RFP50N05 UNITS Drain to Source Voltage...

RFP50N05 Data Sheet

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Part Number:
RFP50N05
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 50A, 50V
• rDS(ON) = 0.022W
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature


Specifications

  RFG50N05, RFP50N05 UNITS
Drain to Source Voltage (Note 1) VDSS 50 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 50 V
Continuous Drain Current ID 50 A
Pulsed Drain Current (Note 3) IDM 120 A
Gate to Source Voltage VGS ±20 V
Power Dissipation PD 132 W
Derate Above 25oC 0.88 A
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ, TSTG -55 to 75 o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 o C



Description

These are N-Channel power MOSFET'S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. RFP50N05 were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. Formerly developmental type TA09772




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