Position: Home  > All Categories> Integrated Circuits (ICs) > RFP6N50

RFP6N50

Features: • 6A, 450V and 500V• rDS(ON) = 1.250W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedence• Majority Carrier Device• Related Literature- TB334 Guidelines for Soldering Surfac...

product image

RFP6N50 Picture
See larger image
SeekIC No. : 004476647 Detail

RFP6N50: Features: • 6A, 450V and 500V• rDS(ON) = 1.250W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impede...

RFP6N50 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
RFP6N50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 6A, 450V and 500V
• rDS(ON) = 1.250W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedence
• Majority Carrier Device
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

  RFM6N45 RFM6N45 RFP6N50 UNITS
Drain to Source Voltage (Note 1) VDSS 450 450 500 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 450 450 500 V
RMS Continuous ID 6 6 6 A
Pulsed Drain Current (Note 3) IDM 15 15 15 V
Maximum Power Dissipation PD ±20 ±20 ±20 V
Maximum Power Dissipation PD 100 75 75 W
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 -55 to 150 o C
Maximum Temperature for Soldering 0.8 0.6 0.6  
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 300   o C
Package Body for 10s, See Techbrief 334 Tpkg 260 260   o C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFP6N50 specifically designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Optical Inspection Equipment
AA924
A21K4B
Filters
PICO2205A
PICO2204A
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
View more