RFP60P03

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : - 30 V
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.027 Ohms


Features:

• 60A, 30V
• r _DS(ON) = 0.027W
• Temperature Compensating PSPICE^® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

			UNITS
Drain to Source Voltage (Note 1)	VDSS	-30	V
Drain to Gate Voltage (RGS = 20kW)(Note 1)	VDGR	-30	V
Gate to Source Voltage	VGS	±20	V
Continuous Drain Current (Figure 2)	ID	60	A
Pulsed Drain Current (Note 3)	IDM	Refer to Peak Current Curve
Single Pulse Avalanche Rating	EAS	Figure 6
Maximum Power Dissipation (Figure 1)	PD	176	W
Derate Above 25		1.17	W/
Operating and Storage Temperature	TJ, TSTG	-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334	TL Tpkg	300 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

These P-Channel power MOSFETs RFP60P03 are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA49045.