Features: • -6A, -80V and -100V• rDS(ON) = 0.600Ω• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Majority Carrier Device• Related Literature- TB334 Guidelines for Solderin...
RFP6P10: Features: • -6A, -80V and -100V• rDS(ON) = 0.600Ω• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Inpu...
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| RFP6P08 | RFP6P10 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 80 | 100 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 80 | 100 | V |
| Continuous Drain Current | |||
| RMS Continuous ID | 6 | 6 | A |
| Pulsed Drain Current (Note 3) IDM | ±20 | ±20 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 60 | 60 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Maximum Temperature for Soldering | |||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | o C |