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RFP7N40

Features: • 7A, 350V and 400V• rDS(ON) = 0.75W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Majority Carrier Device• Related Literature - TB334 Guidelines for Soldering Surfac...

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RFP7N40: Features: • 7A, 350V and 400V• rDS(ON) = 0.75W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedan...

RFP7N40 Data Sheet

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Part Number:
RFP7N40
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 7A, 350V and 400V
• rDS(ON) = 0.75W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

  RFM7N35 RFM7N40 RFP7N35 RFP7N40 UNITS
Drain to Source Voltage (Note 1) VDSS 350 400 350 400 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 350 400 350 400 V
Continuous Drain Current ID 7 7 7 7 A
Pulsed Drain Current (Note 3) IDM 15 15 15 15 A
Gate to Source Voltage VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation PD 100 100 100 100 W
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID 0.8 0.8 0.8 0.8 W/oC
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL 300       o C
Package Body for 10s, See Techbrief 334 Tpkg 260       o C



Description

RFP7N40 are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated
circuits.




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