Features: · 25 dBm P1dB@3.3V· 30 dB gain· 1.5 % EVM @ POUT = +18 dBm· with 54 Mbps OFDM signal· 110 mA @ POUT = +18 dBm· with 54 Mbps OFDM signal· Single +3.3V supply voltage· PA power on/off logic· Input and output matched to 50 ohmsApplication· 802.11b/g WLAN· 2.4 GHz ISM band wireless equipment...
RFSP2020: Features: · 25 dBm P1dB@3.3V· 30 dB gain· 1.5 % EVM @ POUT = +18 dBm· with 54 Mbps OFDM signal· 110 mA @ POUT = +18 dBm· with 54 Mbps OFDM signal· Single +3.3V supply voltage· PA power on/off logic·...
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· 25 dBm P1dB@3.3V
· 30 dB gain
· 1.5 % EVM @ POUT = +18 dBm
· with 54 Mbps OFDM signal
· 110 mA @ POUT = +18 dBm
· with 54 Mbps OFDM signal
· Single +3.3V supply voltage
· PA power on/off logic
· Input and output matched to 50 ohms
|
Parameter |
Rating |
Uni |
| DC Power Supply |
6.0 |
V |
| DC Supply Current |
400 |
mA |
| Maximum RF input level |
-1 |
dBm |
| Operating Ambient Temperature |
-40 to +85 |
°C |
| Storage Temperature |
-55 to +150 |
°C |
The RFSP2020 power amplifier is a highperformance GaAs HBT IC designed for use in transmit applications in the 2.4-2.5 GHz frequency band. With a P1dB of 25 dBm, the device is ideal as a final stage for wireless LAN applications equiring high transmit linearity. Designed with advanced linearizing techniques, the device achieves a specific error vector magnitude (EVM) with lesser backoff than conventional PA designs.
The PA exhibits unparalleled linearity and efficiency for both 802.11b- and 802.11g-based WLAN systems. The RFSP2020 on-chip detector is perfect for systems where power sensing is necessary. The part operates off a single +3.3V supply.