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RG4PC50UPbF

Features: • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3• Industry standard TO-247AC package• Lead-FreeS...

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RG4PC50UPbF: Features: • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode• Generation 4 IGBT design provides tighter parameter distribution...

RG4PC50UPbF Data Sheet

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Part Number:
RG4PC50UPbF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200  kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• Industry standard TO-247AC package
• Lead-Free


Specifications

 

Parameter

Max.

 Units
VCES Collector-to-Emitter Voltage

600

 V
IC @ TC = 25 Continuous Collector Current

55

 A
IC @ TC = 100 Continuous Collector Current

27

ICM Pulsed Collector Current

220

ILM Clamped Inductive Load Current

220

VGE Gate-to-Emitter Voltage
±20
 V
EARV Reverse Voltage Avalanche Energy
20
 mJ
PD @ TC = 25 Maximum Power Dissipation

200

 W
PD @ TC = 100 Maximum Power Dissipation

78

TJ
TSTG		 Operating Junction and
Storage Temperature Range

-55 to +150
  Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

  Mounting Torque, 6-32 or M3 Screw.

10 lbf`in (1.1 N`m)

  
Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0, (See fig. 13a)
Repetitive rating; pulse width limited by maximum junction temperature.


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