RJK5014DPP Selling Leads, Price trend, RJK5014DPP DataSheet download, circuit diagram from SeekIC.com

Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Parameter Symbol Ratings Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V Drain current ID4 19 A Drain peak current ...

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RJK5014DPP: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Parameter Symbol Ratings Unit Drain-source voltage VDSS 500 V ...

RJK5014DPP Data Sheet

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Part Number:: RJK5014DPP
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/4/28

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US $.45 - .5 / Piece

MOSFET N-CH 500V 6A MP3A

Product Details

Description

Features:

• Low on-resistance
• Low leakage current
• High speed switching

Specifications

Parameter	Symbol	Ratings	Unit
Drain-source voltage	V_DSS	500	V
Gate-source voltage	V_GSS	±30	V
Drain current	I_D⁴	19	A
Drain peak current	I_DP¹	38	A
Body-drain diode reverse drain peak current	I_DR	19	A
Avalanche current	I_DRP¹	38	A
Avalanche energy	I_AP³	4	A
Channel dissipation	E_AR³	0.88	mJ
Channel dissipation	Pch²	35	W
Channel to case thermal impedance	ch-c	3.57	°C/W
Channel temperature	Tch	150	°C
Storage temperature	Tstg	−55~+150	°C

Notes: 1. PW 10 s, duty cycle 1%
            2. Value at Tc = 25°C
            3. STch = 25°C, Tch 150°C
            4. Limited by maximum safe operation area

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RJK5014DPP

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