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RJK5012DPP

Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Parameter Symbol Ratings Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V Drain current ID4 12 A Drain peak current ...

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RJK5012DPP: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Parameter Symbol Ratings Unit Drain-source voltage VDSS 500 V ...

RJK5012DPP Data Sheet

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Part Number:
RJK5012DPP
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Low on-resistance
• Low leakage current
• High speed switching


Specifications

Parameter
Symbol
Ratings
Unit
Drain-source voltage
VDSS
500
V
Gate-source voltage
VGSS
±30
V
Drain current
ID4
12
A
Drain peak current
IDP1
24
A
Body-drain diode reverse drain current
IDR
12
A
Body-drain diode reverse drain peak current
IDRP1
24
A
Avalanche current
IAP3
4
A
Avalanche energy
EAR3
0.88
mJ
Channel dissipation
Pch2
30
W
Channel to case thermal impedance
ch-c
4.17
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55~+150
°C
Notes: 1. PW 10 s, duty cycle 1%
           2. Value at Tc = 25°C
           3. STch = 25°C, Tch 150°C
           4. Limited by maximum safe operation area


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