RM806

(1) No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value.
(2) Under pulsed TDMA modulated mode, operation at maximum supply voltage of 6.2 V up to 100 ms.

The dual-mode RM806 Power Amplifier (PA) is a fully matched, 6-pin, surface mount module designed for Time Division Multiple Access (TDMA) and Advanced Mobile Phone Service (AMPS) mobile units operating in the 824-849 MHz cellular bandwidth.

This device RM806 meets stringent IS-136 linearity requirements beyond 30 dBm output power and can be driven to power output levels beyond 31 dBm for high efficiency FM mode operation. A single GaAs (GaAs) Microwave Monolithic Integrated Circuit (MMIC) contains all active circuitry in the module. The MMIC contains onboard bias circuitry as well as input and interstage matching circuits. The output match is realized off-chip within the module package to optimize efficiency and power performance into a 50 ohm load. This device is manufactured using Skyworks^,GaAs Heterojunction Bipolar Transistor (HBT) process, which provides for all positive voltage DC supply operation while maintaining high efficiency and good linearity.

Primary bias to the RM806 can be supplied directly from a three-cell nickel cadmium,a single-cell lithium-ion battery, or any other suitable battery with output in the 3 to 4 volts range. Power down is accomplished by setting the low current reference pin to zero volts. No external supply side switch is needed as typical "off" leakage is a few microamperes with full primary voltage supplied from the battery.