RMPA1959

RF Amplifier 3.4V PCS CDMA PA Module

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SeekIC No. : 00611637 Detail

RMPA1959: RF Amplifier 3.4V PCS CDMA PA Module

floor Price/Ceiling Price

US $ .79~1.47 / Piece | Get Latest Price
Part Number:
RMPA1959
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.47
  • $1.18
  • $.88
  • $.79
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Quick Details

Type : PowerEdge Power Amplifier Module Operating Frequency : 1910 MHz
Operating Supply Voltage : 0 V to 5 V Maximum Operating Temperature : + 85 C
Mounting Style : SMD/SMT Package / Case : LCC-10
Packaging : Reel    

Description

Noise Figure :
Bandwidth :
Output Intercept Point :
Supply Current :
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 85 C
Packaging : Reel
Type : PowerEdge Power Amplifier Module
Operating Frequency : 1910 MHz
Operating Supply Voltage : 0 V to 5 V
Package / Case : LCC-10


Features:

• Single positive-supply operation and low power and shutdown modes
• 39% CDMA efficiency at +28dBm average output power
• Compact LCC package- 4.0 x 4.0 x 1.5 mm with industry standard pinout
• Internally matched to 50 and DC blocked RF input/ output.
• Meets CDMA2000-1XRTT performance requirements



Specifications

Symbol Parameter Min Max Units
VCC1, VCC2 Supply Voltages 0 5.0 V
Vref
Reference Voltage 2.6 3.5 V
Vmode Power Control Voltage 0 3.5 V
Pin RF Input Power +10 dBm
TSTG Storage Temperature -55 +150
Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.



Description

The RMPA1959 power amplifier module (PAM) is designed for CDMA and CDMA2000-1X personal communications system (PCS) applications. The 2 stage PAM is internally matched to 50 to minimize the use of external components and features advanced DC power management to reduce current consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology.




Parameters:

Technical/Catalog InformationRMPA1959
VendorFairchild Semiconductor (VA)
CategoryRF and RFID
Package / Case10-LCC
Voltage - Supply3V ~ 4.2V
Current - Supply50mA
Gain23dB ~ 25dB
Frequency1.85GHz ~ 1.91GHz
RF TypeCDMA, CDMA2000, PCS
PackagingCut Tape (CT)
Noise Figure4dB
P1db-
Test Frequency-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RMPA1959
RMPA1959
RMPA1959CT ND
RMPA1959CTND
RMPA1959CT



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