RMPA2259

Noise Figure :
Bandwidth :
Output Intercept Point :
Operating Supply Voltage :
Supply Current :
Package / Case :
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 85 C
Packaging : Reel
Type : Power Amplifier
Operating Frequency : 1980 MHz


Features:

• 40% CDMA efficiency at +28dBm average output power
• Single positive-supply operation and low power and shutdown modes
• Meets WCDMA/UTMS and HSDPA performance requirements
• Compact Lead-free compliant LCC package - 4.0 x 4.0 x 1.5 mm
• Industry standard pinout
• Internally matched to 50 and DC blocked RF input/ output


Specifications

Symbol	Parameter	Ratings	Units
VCC1, VCC2	Supply Voltages	5.0	V
Vref	Reference Voltage	2.6 to 3.5	V
Vmode	Power Control Voltage	3.5	V
PIN	RF Input Power	+10	dBm
TSTG	Storage Temperature	-55 to +150

Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.


Description

The RMPA2259 power amplifier module (PAM) is designed for WCDMA/UTMS and HSDPA applications. The 2-stage PAM is internally matched to 50 to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process.

Parameters:

Technical/Catalog Information	RMPA2259
Vendor	Fairchild Semiconductor (VA)
Category	RF and RFID
Package / Case	10-LCC
Voltage - Supply	3V ~ 4.2V
Current - Supply	50mA
Gain	24dB
Frequency	1.92GHz ~ 1.98GHz
RF Type	W-CDMA
Packaging	Cut Tape (CT)
Noise Figure	3dB
P1db	-
Test Frequency	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RMPA2259 RMPA2259 RMPA2259CT ND RMPA2259CTND RMPA2259CT