RMPA2451

Features: • 38% power added efficiency• 29dBm typical output power• Small package outline: 0.28 x 0.28 x 0.07 • Low power mode: 0 dBmSpecifications Symbol Parameter Min Max Units Vd1, Vd2 Positive Drain DC Voltage 0 +8 V Vg1, Vg2 Negative Gate DC Volta...

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SeekIC No. : 004478210 Detail

RMPA2451: Features: • 38% power added efficiency• 29dBm typical output power• Small package outline: 0.28 x 0.28 x 0.07 • Low power mode: 0 dBmSpecifications Symbol Parameter ...

floor Price/Ceiling Price

Part Number:
RMPA2451
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/21

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Product Details

Description



Features:

• 38% power added efficiency
• 29dBm typical output power
• Small package outline: 0.28" x 0.28" x 0.07"
• Low power mode: 0 dBm



Specifications

Symbol Parameter Min Max Units
Vd1, Vd2 Positive Drain DC Voltage 0 +8 V
Vg1, Vg2 Negative Gate DC Voltage -5 0 V
VdVg Simultaneous Drain to Gate Voltage   +10 V
PIN
RF Input Power (from 50source)

  +10 dBm
Id1 Drain Current, First Stage   75 mA
Id2 Drain Current, Second Stage   525 mA
Ig Gate Current   5 mA
TC
Channel Temperature   175
TCASE
Operating Case Temperature -40 85
TSTG
Storage Temperature Range -40 125
RJC
Thermal Resistance (Channel to Case)   33 /W



Description

Fairchild Semiconductor's RMPA2451 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for linear, class AB or class F for high efficiency applications.

External matching components are required to optimize the RF performance. The MMIC chip design utilizes our 0.25m power Pseudomorphic High Electron Mobility (PHEMT) process.




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