Features: • 38% power added efficiency• 29dBm typical output power• Small package outline: 0.28 x 0.28 x 0.07 • Low power mode: 0 dBmSpecifications Symbol Parameter Min Max Units Vd1, Vd2 Positive Drain DC Voltage 0 +8 V Vg1, Vg2 Negative Gate DC Volta...
RMPA2451: Features: • 38% power added efficiency• 29dBm typical output power• Small package outline: 0.28 x 0.28 x 0.07 • Low power mode: 0 dBmSpecifications Symbol Parameter ...
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Features: · Positive supply voltage of 3.5V, nominal· Power Added Efficiency of 56%, typical, at p...
Features: • Single positive-supply operation• High dual-mode (AMPS/CDMA) efficiency...
| Symbol | Parameter | Min | Max | Units |
| Vd1, Vd2 | Positive Drain DC Voltage | 0 | +8 | V |
| Vg1, Vg2 | Negative Gate DC Voltage | -5 | 0 | V |
| VdVg | Simultaneous Drain to Gate Voltage | +10 | V | |
| PIN |
RF Input Power (from 50source) |
+10 | dBm | |
| Id1 | Drain Current, First Stage | 75 | mA | |
| Id2 | Drain Current, Second Stage | 525 | mA | |
| Ig | Gate Current | 5 | mA | |
| TC |
Channel Temperature | 175 | ||
| TCASE |
Operating Case Temperature | -40 | 85 | |
| TSTG |
Storage Temperature Range | -40 | 125 | |
| RJC |
Thermal Resistance (Channel to Case) | 33 | /W |
Fairchild Semiconductor's RMPA2451 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for linear, class AB or class F for high efficiency applications.
External matching components are required to optimize the RF performance. The MMIC chip design utilizes our 0.25m power Pseudomorphic High Electron Mobility (PHEMT) process.