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RN2113FT

Application· High-density mount is possible because of devices housed in very thin TESM packages.·Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.·Wide range of resistor value...

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RN2113FT: Application· High-density mount is possible because of devices housed in very thin TESM packages.·Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable...

RN2113FT Data Sheet

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Part Number:
RN2113FT
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

· High-density mount is possible because of devices housed in very thin TESM packages.
·Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.
·Wide range of resistor values are available to use in various circuit designs.
·Complementary to RN1112FT, RN1113FT


Specifications

Characteristic Symbol Rating Unit
Collector-base voltage VCBO -50 V
Collector-emitter voltage VCEO -50 V
Emitter-base voltage VEBO -5 V
Collector current IC -100 mA
Collector power dissipation PC 100 mW
Junction temperature Tj 150
Storage temperature range Tstg −55~150



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