RN2357

The RN2357 is a kind of transistor. It is a silicon PNP epitaxial type (PCT process). RN2357 is intended for inverter circuit, driver circuit and switching applications. There are some features as follows: (1)with built-in bias resistors; (2)simplify circuit design; (3)reduce a quantity of parts and manufacturing process; (4)RN2307 and a diode are included in a SC-70 package.

What comes next is about the maximum ratings of RN2357 (Ta=25): (1)collector-base voltage, VCBO: -50 V; (2)collector-emitter voltage, VCEO: -50 V; (3)emitter-base voltage, VEBO: -6 V; (4)collector current, IC: -100 mA; (5)collector power dissipation, PC: 100 mW; (6)junction temperature, Tj: 150; (7)storage temperature range, Tstg: -55 to 150.

The following is about the electrical characteristics of RN2357 (Ta=25): (1)collector cut-off current, ICBO: -0.1 A at VCB=-50 V, IE=0; (2)emitter cut-off current, IEBO: -0.2 mA max at VEB=-6 V, IC=0; (3)DC current gain, hFE: 80 min at VCE=-5 V, IC=-10 mA; (4)collector-emitter saturation voltage, VCE(sat): -0.1 V typ and -0.3 V max at IC=-5 mA, IB=-0.25 mA; (6)transition frequency, fT: 200 MHz typ at VCE=-10 V, IC=-5 mA; (5)collector output capacitance, Cob: 3.5 pF typ at VCB=-10 V, IE=0, f=1 MHz; (6)input resistor, R1: 7k min, 10k typ and 13k max; (7)resistor ratio, R1/R2: 0.17 min, 0.21 typ and 0.25 max; (8)input voltage (ON), VI(ON): -0.7 V min and -1.3 V max at VCE=-0.2 V, IC=-5 mA; (9)input voltage (OFF), VI(OFF): -0.5 V min and -1.0 V max at VCE=-5 V, IC=-0.1 mA.