RN3034B80W

The RN3034B80W has the following features including Suitable for short and medium pulse application up to 100s pulse width, 10% duty factor;Diffused emitter ballasting resistors improve ruggedness;Interdigitated emitter-base structure provides high emitter efficiency;Gold metallization with barrier realizes very stable characteristics and excellent lifetime;Multicell geometry improves power sharing and reduces thermal resistance;Internal input and output prematching networks allow an easier design of circuits.

Intended for use in common base class C broadband pulsed power amplifiers for radar applications in the 3 to 3.4 GHz band.NPN silicon planar epitaxial microwave power transistor RN3034B80W in a metal ceramic flange package, with base connected to flange.This product contains beryllium oxide. The product is entirely safe provided that the Be0 slab is not damaged.All persons who handle,precautions. After use,the user. It must never dispose of as chemical or special could be aware of its nature and of the necessary safety waste according to the regulations applying at the location of be thrown out with the general or domestic waste.

The products RN3034B80W described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).

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