MOSFET Nch; 20W; 100V; 20A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
Continuous Drain Current : | 20 A | Resistance Drain-Source RDS (on) : | 52 mOhms |
Configuration : | Single | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | CPT3 |
Packaging : | Reel |
Technical/Catalog Information | RSD200N10TL |
Vendor | Rohm Semiconductor(VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 20A |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 10A, 10V |
Input Capacitance (Ciss) @ Vds | 2200pF @ 25V |
Power - Max | 20W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 48.5nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | RSD200N10TL RSD200N10TL RSD200N10TLDKR ND RSD200N10TLDKRND RSD200N10TLDKR |