MOSFET P-CH 30V 3A TSMT6
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | +/- 3 A | ||
| Resistance Drain-Source RDS (on) : | 0.1 Ohms | Configuration : | Single Quad Drain | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TSMT-6 | Packaging : | Reel |
| Technical/Catalog Information | RSQ030P03TR |
| Vendor | Rohm Semiconductor(VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 3A |
| Rds On (Max) @ Id, Vgs | 80 mOhm @ 3A, 10V |
| Input Capacitance (Ciss) @ Vds | 440pF @ 10V |
| Power - Max | 1.25W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 6nC @ 5V |
| Package / Case | TSMT6 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RSQ030P03TR RSQ030P03TR RSQ030P03DKR ND RSQ030P03DKRND RSQ030P03DKR |