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RSR010N10TL

MOSFET N-CH 100V 1.0A TSMT3

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SeekIC No. : 003430679 Detail

RSR010N10TL: MOSFET N-CH 100V 1.0A TSMT3

RSR010N10TL Data Sheet

floor Price/Ceiling Price

US $ .16~.4 / Piece | Get Latest Price
Part Number:
RSR010N10TL
Mfg:
Supply Ability:
5000

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  • Unit Price
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  • $.27
  • $.23
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  • $.16
  • Processing time
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Rohm Semiconductor
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 1A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 520 mOhm @ 1A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: 3.5nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 140pF @ 25V
Power - Max: 540mW Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TSMT3    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 100V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) @ Vds: 140pF @ 25V
Current - Continuous Drain (Id) @ 25° C: 1A
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Manufacturer: Rohm Semiconductor
Supplier Device Package: TSMT3
Rds On (Max) @ Id, Vgs: 520 mOhm @ 1A, 10V
Gate Charge (Qg) @ Vgs: 3.5nC @ 5V
Power - Max: 540mW


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