RSR020N06TL, US $ .11-.11, RSR020N06TL DataSheet download, circuit diagram from SeekIC.com

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RSR020N06TL: MOSFET N-CH 60V 2A TSMT6

RSR020N06TL Data Sheet

US $ .11~.11 / Piece | Get Latest Price

Part Number:: RSR020N06TL
Mfg:
Supply Ability:: 5000

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0~3000

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$.11

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15 Days

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Recent History
What is this?

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Product Details

Quick Details

Series:	-	Manufacturer:	Rohm Semiconductor
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Current - Collector (Ic) (Max):	-	FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	60V	Continuous Drain Current :	15 A
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	2A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	170 mOhm @ 2A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	2.5V @ 1mA	Gate Charge (Qg) @ Vgs:	2.7nC @ 5V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	180pF @ 10V
Power - Max:	1W	Mounting Type:	Surface Mount
Package / Case:	SOT-23-6 Thin, TSOT-23-6	Supplier Device Package:	TSMT6

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Power - Max: 1W
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 2A
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Manufacturer: Rohm Semiconductor
Package / Case: SOT-23-6 Thin, TSOT-23-6
Input Capacitance (Ciss) @ Vds: 180pF @ 10V
Supplier Device Package: TSMT6
Gate Charge (Qg) @ Vgs: 2.7nC @ 5V
Rds On (Max) @ Id, Vgs: 170 mOhm @ 2A, 10V

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RSR020N06TL

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