RX1011B250Y

The RX1011B250Y has the following features including Interdigitated structure; high emitter efficiency;Diffused emitter ballasting resistors; capable of withstanding a high VSWR and providing excellent current sharing;Gold metallization; ensuring excellent stability of the characteristics and giving a prolonged working life;Multicell geometry; giving good balance of dissipated power and low thermal resistance;Input and output matching cells; simplifying circuit design.

The transistor of RX1011B250Y is housed in a metal-ceramic flange envelope (FO-91).NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier with a frequency range of 1.03 to 1.09 GHz. It is recommended for IFF long pulse applications.This product contains beryllium oxide. The product is entirely safe provided that the Be0 slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with general industrial or domestic waste.Maximum value under normal pulsed microwave operating conditions.Microwave performance up to Tmb=25 0C in an unneutralized common-base class-C broadband amplifier.

The RX1011B250Y described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).

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