Position: Home  > All Categories> Integrated Circuits (ICs) > RX1214B130Y

RX1214B130Y

Features: · Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor· Diffused emitter ballasting resistors improve ruggedness· Interdigitated emitter-base structure provides high emitter efficiency· Gold metallization with barrier realizes very stable characteristi...

product image

RX1214B130Y Picture
See larger image
SeekIC No. : 004480539 Detail

RX1214B130Y: Features: · Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor· Diffused emitter ballasting resistors improve ruggedness· Interdigitated emitter-base structure ...

RX1214B130Y Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
RX1214B130Y
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·  Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor
·  Diffused emitter ballasting resistors improve ruggedness
·  Interdigitated emitter-base structure provides high emitter efficiency
·  Gold metallization with barrier realizes very stable characteristics and excellent lifetime
·  Multicell geometry improves power sharing and reduces thermal resistance
·  Internal input and output prematching networks allow an easier design of circuits.




Specifications

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage open emitter - 65 V
VCEO collector-emitter voltage open base - 15 V
VCES collector-emitter voltage RBE =0 - 60 V
VEBO emitter-base voltage open collector - 3 V
IC collector current (DC) tp 150 s; 5% - 9 A
Ptot total power dissipation Tmb <75 ; tp 150 s; 5% - 280 W
Tstg storage temperature   -65 +200
Tj operating junction temperature   - 200
Tsld soldering temperature t 10 s; note 1 - 235



Description

NPN silicon planar epitaxial microwave power transistor in a RX1214B130Y metal ceramic flange package, with base connected to flange.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Optical Inspection Equipment
AA924
A21K4B
Cable Assemblies
CS1W-CN114
XW2Z-500T
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
View more