RX1214B350Y

·  Suitable for short and medium pulse applications up to 1 ms/10%
·  Internal input prematching networks allow an easier design of circuits
·  Diffused emitter ballasting resistors improve ruggedness
·  Interdigitated emitter-base structure provides high emitter efficiency
·  Gold metallization with barrier realizes very stable characteristics and excellent lifetime
·  Multicell geometry improves power sharing and reduces thermal resistance.

Common base, class C, broadband, pulsed power amplifiers for L-Band radar applications in the 1.2 to 1.4 GHz band. Also suitable for medium pulse, heavy duty operation within this band.

NPN silicon planar epitaxial microwave power transistor in a RX1214B350Y metal ceramic flange package with base connected to flange.