S-24H30IF10

The S-24H30IF10 is designed as a non-volatile CMOS RAM, composed of a CMOS static RAM and a non-volatile electrically erasable and programmable memory (E2PROM) to backup the SRAM.

S-24H30IF10 has nine features. (1)64 bits. (2)Non-volatile functions can be controlled by software and hardware. (3)Erroneous store protection is 3.5V. (4)All inputs and outputs are compatible with TTL. (5)+5V single power supply (+5V+/-10%). (6)Low current consumption which would be 5mA typ for operating and 1uA max for standby. (7)Its E2PROM store cycles would be 10^5 times. (8)Its E2PROM data retention 10 years. (9)8-pin DIP package. Those are all the main features.

Some absolute maximum ratings of S-24H30IF10 have been concluded into several points as follow. (1)Its power supply voltage would be from -0.3V to 6.0V. (2)Its input voltage would be from -0.3V to Vcc+0.3V. (3)Its output voltage would be from 0V to Vcc. (4)Its storage temperature under bias would be from -50°C to 95°C. (5)Its storage temperature range would be from -65°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of S-24H30IF10 are concluded as follow. (1)Its operating current consumption would be typ 5mA and max 10mA. (2)Its sleep current would be max 1uA. (3)Its standby current would be max 1uA. (4)Its store current would be typ 5mA and max 10mA. (5)Its input leakage current would be typ 0.1uA and max 1uA. (6)Its output leakage current would be typ 0.1uA and max 1uA. (7)Its low level output voltage would be max 0.1V for CMOS Iol=100uA and would be max 0.4V at TTL Iol=2.1mA. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!