S175 - 50

SpecificationsMaximum Power Dissipation @ 25oC 270 WattsMaximum Voltage and CurrentBVces Collector to Emiter Voltage 110 VoltsBVebo Emitter to Base Voltage 4.0 VoltsIc Collector Current 20 AMaximum TemperaturesStorage Temperature -65 to +150 C oOperating Junction Temperature +200oCDescriptionThe S...

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S175 - 50 Picture
SeekIC No. : 004481325 Detail

S175 - 50: SpecificationsMaximum Power Dissipation @ 25oC 270 WattsMaximum Voltage and CurrentBVces Collector to Emiter Voltage 110 VoltsBVebo Emitter to Base Voltage 4.0 VoltsIc Collector Current 20 AMaximum ...

floor Price/Ceiling Price

Part Number:
S175 - 50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Specifications

Maximum Power Dissipation @                      25oC 270 Watts
Maximum Voltage and Current
BVces Collector to Emiter Voltage                 110 Volts
BVebo Emitter to Base Voltage                    4.0 Volts
Ic Collector Current 20 A
Maximum Temperatures
Storage Temperature                                 - 65 to +150 C o
Operating Junction Temperature                +200oC



Description

The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A,AB or C operation in the HF/VHF frequency bands. Its high collector voltagesimplifies the design of wideband, SSB linear amplifiers. The transistor chip isbuilt using Gold Topside Metal, diffused emitter ballast resistors and siliconnitride passivation, providing the user with the Highest MTTF available.




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