Purchase S1L50000, In-stock S1L50000 From SeekIC.
Part Number: S1L50000
Description: EPSON Electronics America, Inc.'s S1L50000 Series is a family of ultra high-speed VLSI CMOS gate array utilizing a 0.35...
- Table of contents:
S1L50000
-
Suppliers
DataSheet
General Description
S1L50000 General Description
EPSON Electronics America, Inc.'s S1L50000 Series is a family of ultra high-speed VLSI CMOS gate array utilizing a 0.35mm "sea-of-gates" architecture. The S1L50000H products feature 5V tolerant I/O buffers.
` Ultra-high-speed, high density and low power consumption
` Low voltage operation: 3.3V and 2.0V
` Number of raw gates: 28,710 ~ 815,468 gates
S1L50000 Maximum Ratings
|
Item |
Symbol |
Limits |
Unit |
| Power Supply Voltage |
VDD |
-0.3 to 4.0 |
V |
| Input Voltage |
VI |
-0.3 to VDD + 0.5*1 |
V |
| Output Voltage |
VO |
-0.3 to VDD + 0.5*1 |
V |
| Output Current/Pin |
IOUT |
± 30 |
mA |
| Storage Temperature |
TSTG |
-65 to 150 |
°C |
*1: Possible to use from -0.3V to 7.5V of I/O buffer voltage in the open-drain systems and input buffer in the IDC and IDH systems.
|
Item |
Symbol |
Limits |
Unit |
| Power Supply Voltage |
HVDD |
-0.3 to 7.0 |
V |
|
LVDD |
-0.3 to 4.0 |
V | |
| Input Voltage |
HVI |
-0.3 to HVDD + 0.5*1 |
V |
|
LVI |
-0.3 to LVDD + 0.5*1 |
V | |
| Output Voltage |
HVO |
-0.3 to HVDD + 0.5*1 |
V |
|
LVO |
-0.3 to LVDD + 0.5*1 |
V | |
| Output Current/Pin |
IOUT |
± 30 (± 50 *2) |
mA |
| Storage Temperature |
TSTG |
-65 to 150 |
°C |
**1: Possible to use from -0.3V to 7.5V of I/O buffer voltage in the open-drain systems and input buffer in the IDC and IDH systems.
*2: Possible to use for 24mA of output buffer.
S1L50000 Features
` Process 0.35m 2/3/4 layer metalization CMOS process
` Integration A maximum of 815,468 gates (2 input NAND gate equivalent)
` Operating Speed Internal gates: 140 ps (3.3V Typ), 210 ps (2.0V Typ) (2-input pair NAND, F/O = 2, Typical wire load)
Input buffer: 380 ps (5.0V Typ) Built-in level shifter is used. 400 ps (3.3V Typ), 1.30 ns (2.0V Typ) (F/O = 2, Typical wire load)
Output buffer: 2.12 ns (5.0V Typ) Built-in level shifter is used. 2.02 ns (3.3 V Typ), 3.90 ns (2.0V Typ) (CL = 15 pF)
` I/F Levels Input/Output TTL/CMOS/LVTTL compatible
` Input Modes TTL, CMOS, LVTTL, TTL Schmitt, CMOS Schmitt, LVTTL Schmitt, PCI Built-in pull-up and pull-down resistors can be usable. (2 types for each resistor value)
` Output Modes Normal, 3-state, bi-directional, PCI
` Output Drive IOL = 0.1, 1, 3, 8, 12, 24 mA selectable (Built-in level shifter is used at 5.0V)
IOL = 0.1, 1, 2, 6, 12 mA selectable (at 3.3V)
IOL = 0.05, 0.3, 0.6, 2, 4 mA selectable (at 2.0V)
` RAM Asynchronous 1-port, asynchronous 2-port
` Dual Power Operation supported by using level-shifter circuit
Internal logic: Operation supported by low voltage
I/O Buffer: Built-in interfaces of both high and low voltages possible
` Operation possible at VDD= 2.0 ± 0.2V
` Integration A maximum of 815,468 gates (2 input NAND gate equivalent)
` Operating Speed Internal gates: 140 ps (3.3V Typ), 210 ps (2.0V Typ) (2-input pair NAND, F/O = 2, Typical wire load)
Input buffer: 380 ps (5.0V Typ) Built-in level shifter is used. 400 ps (3.3V Typ), 1.30 ns (2.0V Typ) (F/O = 2, Typical wire load)
Output buffer: 2.12 ns (5.0V Typ) Built-in level shifter is used. 2.02 ns (3.3 V Typ), 3.90 ns (2.0V Typ) (CL = 15 pF)
` I/F Levels Input/Output TTL/CMOS/LVTTL compatible
` Input Modes TTL, CMOS, LVTTL, TTL Schmitt, CMOS Schmitt, LVTTL Schmitt, PCI Built-in pull-up and pull-down resistors can be usable. (2 types for each resistor value)
` Output Modes Normal, 3-state, bi-directional, PCI
` Output Drive IOL = 0.1, 1, 3, 8, 12, 24 mA selectable (Built-in level shifter is used at 5.0V)
IOL = 0.1, 1, 2, 6, 12 mA selectable (at 3.3V)
IOL = 0.05, 0.3, 0.6, 2, 4 mA selectable (at 2.0V)
` RAM Asynchronous 1-port, asynchronous 2-port
` Dual Power Operation supported by using level-shifter circuit
Internal logic: Operation supported by low voltage
I/O Buffer: Built-in interfaces of both high and low voltages possible
` Operation possible at VDD= 2.0 ± 0.2V
S1L50000
PDF/DataSheet Download
- Datasheet: S1L50000
- File Size: 124597 KB
- Manufacturer: Epson
- Click here to Download
- ·S1L50282
- Epson Company
- HIGH DENSITY GATE ARRAY
- 108398 KB
- ·S1L50283
- Epson Company
- HIGH DENSITY GATE ARRAY
- 108398 KB
- ·S1L50284
- Epson Company
- HIGH DENSITY GATE ARRAY
- 108398 KB
- ·S1L50752
- Epson Company
- HIGH DENSITY GATE ARRAY
- 108398 KB
- ·S1L50753
- Epson Company
- HIGH DENSITY GATE ARRAY
- 108398 KB
- ·S1L50754
- Epson Company
- HIGH DENSITY GATE ARRAY
- 108398 KB
- ·S1L50992
- Epson Company
- HIGH DENSITY GATE ARRAY
- 108398 KB
- ·S1L50993
- Epson Company
- HIGH DENSITY GATE ARRAY
- 108398 KB
S1L50000 Relative Products
Hotspot Suppliers Product
7MB175SA-120B
Price: 1-2 USD
7D100D-050EHR, IGBT module, Fuji Electric
OP27GP
Price: 1.15-1.35 USD
IC OPAMP GP 8MHZ LN PREC 8DIP - OP27GP
SN74HC595N
Price: 0.06-0.09 USD
8-bit shift register, DIP, -0.5 V to 7 V, ±70 mA, Low Power Consumption, Low Input Current, 3-state
25Q16SCP
Price: 0.4-0.5 USD
25Q16SCP SOP8 Winbond
MAX845ESA
Price: 1.15-1.65 USD
Isolated Transformer Driver, SOP-8, -0.3V to +7V, 1A, 450kHz
ADC0809CCN
Price: 4-6 USD
IC ADC 8BIT MPU 8CH MUX 28-DIP - ADC0809CCN
PK110F-160
Price: 1-2 USD
thyristor module, 1600V Repetitive Peak Reverse Voltage, 10W Gate Power Dissipation, 3A Peak Gate ...
ICL7673CBAZ
Price: 0.65-1.11 USD
CMOS battery backup circuit, SOP-8, 38mA, GND - 0.3V to +18V, ICL7673CBAZ
CD4013BM96
Price: 0.1-1 USD
D-type flip-flop, SOP, -0.5V to 20V, +/-10mA, Set-reset capability
SKRKAGE010
Price: 0.6-0.9 USD
3.9×2.9mm, Tactile N.O. SPST Button, Gull Wing, 0.05A, 12VDC, 1.57N, SMD, switch
82C55AC-2
Price: 1.5-2 USD
82C55AC-2, DIP, Integrated Circuits
RHRP30120
Price: 0.9-1.9 USD
hyperfast diode, 30A, 1200V
