S25FL032P

Note
1. Minimum DC voltage on input or I/Os is -0.5V. During voltage transitions, inputs or I/Os may undershoot V_SS to -2.0V for periods of up to 0 ns. See Figure 14.1. Maximum DC voltage on input or I/Os is V_CC + 0.5V. During voltage transitions puts or I/Os may overshoot to CC + 2.0V for periods up to 20 ns. See Figure 14.2.
2. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
3. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; unctional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is ot implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.

The S25FL032P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists
of 64 uniform 64 KB sectors with the two (Top or Bottom) 64 KB sectors further split up into thirty-two 4KB sub ectors. The S25FL032P device is fully backward compatible with the S25FL032A device.

The S25FL032P accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices re esigned to be programmed in-system with the standard system 3.0-volt VCC supply.

The S25FL032P device adds the following high-performance features using 5 new instructions:
Dual Output Read using both SI and SO pins as output pins at a clock rate of up to 80 MHz
Quad Output Read using SI, SO, W#/ACC and HOLD# pins as output pins at a clock rate of up to 80 MHz
Dual I/O High Performance Read using both SI and SO pins as input and output pins at a clock rate of up
to 80 MHz
Quad I/O High Performance Read using SI, SO, W#/ACC and HOLD# pins as input and output pins at a lock rate of up to 80 MHz
 Quad Page Programming using SI, SO, W#/ACC and HOLD# pins as input pins to program data at a clock ate of up to 80 MHz he memory can be programmed 1 to 256 bytes at a time, using the Page Program command. The device pports Sector Erase and Bulk Erase commands.

Each device S25FL032P requires only a 3.0-volt power supply (2.7V to 3.6V) for both read and write functions. nternally enerated and regulated voltages are provided for the program operations. This device requires a high

voltage supply to the W#/ACC pin to enable the Accelerated Programming mode.
The S25FL032P device also offers a One-Time Programmable area (OTP) of up to 128-bits (16 bytes) for ermanent secure identification and an additional 490 bytes of OTP space for other use. This OTP area can e programmed or read using the OTPP or OTPR instructions.