Features: ` Three photodiodes with common cathode` Fast response times` Small junction capacitance` High photo sensitivity` Large radiant sensitive area (A = 3 x 7.5 mm2)` Wide angle of half sensitivity = ± 65` Suitable for visible and near infrared radiationApplicationHigh speed and high sensitiv...
S268P: Features: ` Three photodiodes with common cathode` Fast response times` Small junction capacitance` High photo sensitivity` Large radiant sensitive area (A = 3 x 7.5 mm2)` Wide angle of half sensiti...
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|
Parameter |
Test Conditions |
Symbol |
Value |
Unit |
| Reverse Voltage |
VR |
60 |
V | |
| Power Dissipation |
Tamb 25 |
PV |
215 |
mW |
| Junction Temperature |
Tj |
100 |
| |
| Storage Temperature Range |
Tstg |
55..+100 |
| |
| Soldering Temperature |
t 3 s, mounted on plated, printed board |
Tsd |
260 |
|
| Thermal Resistance Junction/Ambient |
RchJA |
350 |
K/W |
S268P is a silicon PIN photodiode array in a inline configuration.
Three single photodiode chips S268P with a common cathode are mounted in a waterclear 8 pin dual in line package.Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.