S29GL128

-Program Suspend & Resume: read other sectors before programming operation is completed
-Erase Suspend & Resume: read/program other sectors before an erase operation is completed
-Data# polling & toggle bits provide status
-CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
-Unlock Bypass Program command reduces overall multiple-word programming time

Storage Temperature, Plastic Packages. . . . . . . .. . . . . . 65°C to +150°C
Ambient Temperature with Power Applied. . . . . . .  . . .. 65°C to +125°C
Voltage with Respect to Ground:
          V_CC (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.5 V to +4.0 V
           . . . . . . . .  . .A9, OE#, ACC and RESET# (Note 2)0.5 V to +12.5 V
          All other pins (Note 1). . . . . . . . . . .. .  . . . . . . 0.5 V to V_CC+0.5 V
Output Short Circuit Current (Note 3). . . . . . . . . . . . . . . . . . . . . . 200 mA

The S29GL128 devices are 3.0 V single power Flash memory manufactured using 0.23 um MirrorBit technology. The S29GL256M is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, or ganized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the S29GL128 have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The S29GL128 can be programmed either in the host system or in standard EPROM programmers.

Access times of S29GL128 as fast as 90 ns (S29GL128M, S29GL064M, S29GL032M) or 100 ns (S29GL256M) are available. Note that each access time has a specific operating voltage range (V_CC) as specified in the Product Selector Guide and the Ordering Information sections. Package offerings include 40-pin TSOP, 48-pin TSOP, 56-pin TSOP, 48-ball fine-pitch BGA, 63-ball fine-pitch BGA and 64-ball Fortified BGA, depending on model number. Each device S29GL128 has sepa-rate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.

Each device S29GL128 requires only a single 3.0 volt power supply for both read and write functions. In addition to a VCCinput, a high-voltage accelerated program (ACC) feature provides shorter programming times through in-creased current on the WP#/ACC input. This feature of S29GL128 is intended to facilitate factory throughput during system production, but may also be used in the field if desired. The S29GL128 is entirely command set compatible with the JEDEC single-power-supply Flash standard. Com-mands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations.

The sector erase architecture of S29GL128 allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory.

Device programming and erasure of S29GL128 are initiated through command sequences. Once a program or erase operation starts, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/Busy# (RY/BY#) output to determine whether the operation is complete. To facilitate programming, an Unlock Bypass mode of S29GL128 reduces command sequence overhead by requiring only two write cycles to program data instead of four.

Hardware data protection measures of S29GL128 include a low VCC detector that automatically inhibits write operations dur-ing power transitions. The hardware sector protection feature disables both program and erase operations in any combination of sectors of memory. This can be achieved in-system or via programming equipment.

The Erase Suspend/Erase Resume feature of S29GL128 allows the host system to pause an erase operation in a given sector to read or program any other sector and then complete the erase operation. The Program Suspend/Program Resume feature enables the host system to pause a program operation in a given sector to read any other sector and then complete the program operation.

The hardware RESET# pin of S29GL128 terminates any operation in progress and resets the device, after which it is then ready for a new operation. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the host system to read boot-up firmware from the Flash memory device.

The S29GL128 reduces power consumption in the standby mode when it detects specific voltage levels on CE# and RESET#, or when addresses are stable for a specified period of time.

The Write Protect (WP#) feature of S29GL128 protects the first or last sector by asserting a logic low on the WP#/ACC pin or WP# pin, depending on model number. The protected sector is still protected even during accelerated programming.

The SecSi™ (Secured Silicon) Sector of S29GL128 provides a 128-word/256-byte area for code or data that can be perma-nently protected. Once this sector is protected, no further changes within the sector can occur.

Spansion MirrorBit flash technology of S29GL128  combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via hot-hole assisted erase. The data is programmed using hot electron injection.