S29PL-J

Features: Software command-set compatible with JEDEC 42.4 standard Backward compatible with Am29F, Am29LV, Am29DL, and AM29PDLfamilies and MBM29QM/RM, MBM29LV, MBM29DL, MBM29PDLfamiliesCFI (Common Flash Interface) compliant Provides device-specific information to the system, allowing hostsoftware...

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SeekIC No. : 004481853 Detail

S29PL-J: Features: Software command-set compatible with JEDEC 42.4 standard Backward compatible with Am29F, Am29LV, Am29DL, and AM29PDLfamilies and MBM29QM/RM, MBM29LV, MBM29DL, MBM29PDLfamiliesCFI (Common ...

floor Price/Ceiling Price

Part Number:
S29PL-J
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

Software command-set compatible with JEDEC 42.4 standard
Backward compatible with Am29F, Am29LV, Am29DL, and AM29PDL
families and MBM29QM/RM, MBM29LV, MBM29DL, MBM29PDL
families
CFI (Common Flash Interface) compliant
Provides device-specific information to the system, allowing host
software to easily reconfigure for different Flash devices
Erase Suspend / Erase Resume
Suspends an erase operation to allow read or program operations in
other sectors of same bank
Program Suspend / Program Resume
Suspends a program operation to allow read operation from sectors
other than the one being programmed
 Unlock Bypass Program command
Reduces overall programming time when issuing multiple program



Specifications

Storage Temperature Plastic Packages
65°C to +150°C
Ambient Temperature with Power Applied
65°C to +125°C
Voltage with Respect to Ground
VCC (Note 1)
0.5 V to +4.0 V
A9, OE#, and RESET# (Note 2)
0.5 V to +13.0 V
WP#/ACC (Note 2)
0.5 V to +10.5 V
All other pins (Note 1)
0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3)
200 mA



Description

S29PL-J features:

  128/128/64/32 Mbit Page Mode devices
Page size of 8 words: Fast page read access from random locations
within the page
  Single power supply operation
Full Voltage range: 2.7 to 3.6 volt read, erase, and program operations
for battery-powered applications
  Dual Chip Enable inputs (only in PL129J)
Two CE# inputs control selection of each half of the memory space
  Simultaneous Read/Write Operation
Data can be continuously read from one bank while executing erase/
program functions in another bank
Zero latency switching from write to read operations
  FlexBank Architecture (PL127J/PL064J/PL032J)
4 separate banks, with up to two simultaneous operations per device
Bank A:
PL127J -16 Mbit (4 Kw x 8 and 32 Kw x 31)
PL064J - 8 Mbit (4 Kw x 8 and 32 Kw x 15)
PL032J - 4 Mbit (4 Kw x 8 and 32 Kw x 7)
Bank B:
PL127J - 48 Mbit (32 Kw x 96)
PL064J - 24 Mbit (32 Kw x 48)
PL032J - 12 Mbit (32 Kw x 24)
Bank C:
PL127J - 48 Mbit (32 Kw x 96)
PL064J - 24 Mbit (32 Kw x 48)
PL032J - 12 Mbit (32 Kw x 24)
Bank D:
PL127J -16 Mbit (4 Kw x 8 and 32 Kw x 31)
PL064J - 8 Mbit (4 Kw x 8 and 32 Kw x 15)
PL032J - 4 Mbit (4 Kw x 8 and 32 Kw x 7)
  FlexBank Architecture (PL129J)
4 separate banks, with up to two simultaneous operations per device
CE#1 controlled banks:
Bank 1A: PL129J - 16Mbit (4Kw x 8 and 32Kw x 31)
Bank 1B: PL129J - 48Mbit (32Kw x 96)
CE#2 controlled banks:
Bank 2A: PL129J - 48 Mbit (32Kw x 96)
Bank 2B: PL129J - 16Mbit (4Kw x 8 and 32Kw x 31)
  Enhanced VersatileI/O (VIO) Control
Output voltage generated and input voltages tolerated on all control
inputs and I/Os is determined by the voltage on the VIO pin
VIO options at 1.8 V and 3 V I/O for PL127J and PL129J devices
3V VIO for PL064J and PL032J devices
  Secured Silicon Sector region
Up to 128 words accessible through a command sequence
Up to 64 factory-locked words
Up to 64 customer-lockable words
Both top and bottom boot blocks in one device
Manufactured on 110 nm process technology
Data Retention: 20 years typical
 Cycling Endurance: 1 million cycles per sector typical




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