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S29WS-P

Features: Single 1.8 V read/program/erase (1.701.95 V) 90 nm MirrorBit™ Technology Simultaneous Read/Write operation with zero latency Random page read access mode of 8 words with 20 ns intra page access time 32 Word / 64 Byte Write Buffer Sixteen-bank architecture consisting of 32/16/8 Mwor...

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SeekIC No. : 004481862 Detail

S29WS-P: Features: Single 1.8 V read/program/erase (1.701.95 V) 90 nm MirrorBit™ Technology Simultaneous Read/Write operation with zero latency Random page read access mode of 8 words with 20 ns intra ...

S29WS-P Data Sheet

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Part Number:
S29WS-P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

Single 1.8 V read/program/erase (1.701.95 V)
90 nm MirrorBit™ Technology
Simultaneous Read/Write operation with zero latency
Random page read access mode of 8 words with 20 ns intra page access time
32 Word / 64 Byte Write Buffer
Sixteen-bank architecture consisting of 32/16/8 Mwords for 512/256/128P, respectively
Four 16 Kword sectors at both top and bottom of memory array
510/254/126 64Kword sectors (WS512/256/128P)
Programmable linear (8/16/32) with or without wrap around and continuous burst read modes
Secured Silicon Sector region consisting of 128 words each for factory and 128 words for customer
20-year data retention (typical)
Cycling Endurance: 100,000 cycles per sector (typical)
Command set compatible with JEDEC (42.4) standard
Hardware (WP#) protection of top and bottom sectors
Dual boot sector configuration (top and bottom)
Handshaking by monitoring RDY
Offered Packages
WS512P/WS256P/WS128P: 84-ball FBGA (11.6 mm x 8 mm)
Low VCC write inhibit
Persistent and Password methods of Advanced Sector Protection
Write operation status bits indicate program and erase operation completion
Suspend and Resume commands for Program and Erase operations
Unlock Bypass program command to reduce programming time
Synchronous or Asynchronous program operation, independent of burst control register settings
ACC input pin to reduce factory programming time
Support for Common Flash Interface (CFI)􀂄 Single 1.8 V read/program/erase (1.701.95 V)
90 nm MirrorBit™ Technology
Simultaneous Read/Write operation with zero latency
Random page read access mode of 8 words with 20 ns intra page access time
32 Word / 64 Byte Write Buffer
Sixteen-bank architecture consisting of 32/16/8 Mwords for 512/256/128P, respectively
Four 16 Kword sectors at both top and bottom of memory array
510/254/126 64Kword sectors (WS512/256/128P)
Programmable linear (8/16/32) with or without wrap around and continuous burst read modes
Secured Silicon Sector region consisting of 128 words each for factory and 128 words for customer
20-year data retention (typical)
Cycling Endurance: 100,000 cycles per sector (typical)
Command set compatible with JEDEC (42.4) standard
Hardware (WP#) protection of top and bottom sectors
Dual boot sector configuration (top and bottom)
Handshaking by monitoring RDY
Offered Packages
WS512P/WS256P/WS128P: 84-ball FBGA (11.6 mm x 8 mm)
Low VCC write inhibit
Persistent and Password methods of Advanced Sector Protection
Write operation status bits indicate program and erase operation completion
Suspend and Resume commands for Program and Erase operations
Unlock Bypass program command to reduce programming time
Synchronous or Asynchronous program operation, independent of burst control register settings
ACC input pin to reduce factory programming time
 Support for Common Flash Interface (CFI)


Specifications

Storage Temperature Plastic Packages 65°C to +150°C
Ambient Temperature with Power Applied 65°C to +125°C
Voltage with Respect to Ground: All Inputs and I/Os except as noted below (Note 1) 0.5 V to + 2.5 V
VCC (Note 1) 0.5 V to +2.5 V
ACC (Note 2) 0.5 V to +9.5 V
Output Short Circuit Current (Note 3) 100 mA



Description

The Spansion S29WS-P are Mirrorbit® Flash products fabricated on 90 nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins. These S29WS-P can operate up to 104 MHz and use a single VCC of 1.7 V to 1.95 V that makes them ideal for today's demanding wireless applications requiring higher density, better performance and lowered power
consumption.




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