S30MS512P

Features:

Single Power Supply Operation
  1.8 volt read, erase, and program operations
  V_CC = 1.7 to 1.95V
Manufactured on 90 nm MirrorBit^TM Process Technology
Bus widths - x8 and x16
Page Size
  Full Page Read 2K + 64 Byte
  Partial Page Read 512 + 16 Byte
Block (erase unit) Architecture
  Number of Blocks
    1Gb: 1K blocks
    512Mb: 512 blocks
  Block Size
    128K + 4K Byte
Compatibility with NAND Flash I/O
  Provides pinout and command set compatibility with single-power supply NAND flash
High-Performance Cache Register
  Cache Register matches page size to improve programming throughput
100,000 Program/Erase Cycles per Sector Typical
10-Year Data Retention Typical
Operating Temperature Ranges
  Wireless (-25°C to +85°C)
Package options
  48-pin TSOP
  137-ball FBGA MCP Compatible
100% Valid Blocks


Pinout




Specifications

Parameter	Symbol	Rating	Unit
Voltage on any pin relative to Vss	VIN/OUT	-0.5 to Vcc + 0.5	V
	VCC	-0.5 to + 2.5
Storage Temperature	TSTG	-65 to +150
Operating Temperature	TOPR	0 to +70 (Commercial) -40 to +85 (Industrial) -25 to +85 (Wireless)
Temperature under bias	TBIAS	-65 to 125
Short circuit current	IOS	5	mA

Notes:
1. Minimum DC voltage is -0.6v on input/output pins. During transitions, this level may undershoot to -2.0v for periods <30ns.
2. Maximum DC voltage on input/output pins is Vcc+0.3v which, during transitions, may overshoot to Vcc+2.0v for periods < 20ns.
3. Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the conditions as details in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.


Description

The S30MS-P is a 1.8V single voltage flash memory product manufactured using 90 nm MirrorBit™ technology. The S30MS01GP is a 1Gb device, organized as 64M Words or 128MB. The S30MS512P is a 512Mb device, organized as 32M Words or 64MB.

TheS30MS512P offer advantages such as:
Fast write and sustained write speed suitable for data storage applications
Fast read speed and reliability suitable for demanding code storage applications
Proven MirrorBit™ technology

The S30MS512P are offered in a 48-pin TSOP, or FBGA MCP-compatible packages. Each device has separate chip enable (CE#) controls for the FBGA package.

The S30MS512P is a byte/word serial-type memory device that utilizes the I/O pins for both address and data input/output, as well as for command input. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state disks, pictures storage for still cameras, cellular phones, and other systems that require high-density non-volatile data storage.