Features: • Low current consumption• Outstanding low- and high-band noise figure• Excellent gain stability versus temperature and supply• Image reject high-band mixer with over 30 dB of rejection• Increased low-band LNA gain compression during analog transmission̶...
SA1920: Features: • Low current consumption• Outstanding low- and high-band noise figure• Excellent gain stability versus temperature and supply• Image reject high-band mixer with ov...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

| QUANTITY | SYMBOL | VALUE | UNIT |
| Input supply voltage at pins: 7, 25, 27, 40 | VCC | 4.75 | V |
| Power dissipation | PD | 150 | mW |
| Input power at all ports | PIN | +20 | dBm |
| Operating temperature range (pin temp) | TO | 40 to+85 | |
| Storage temperature range | Tsrg | 65 to +125 |
The SA1920 is an integrated dual-band RF front-end that operates at both cellular (AMPS, GSM and TDMA) and PCS/DCS (TDMA and GSM) frequencies, and is designed in a 13 GHz fT BiCMOS process-QUBiC1. The low-band is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise figure at 881 MHz with 17.5 dB of gain and an IIP3 of 5 dBm. The wide-dynamic range mixer has a 10 dB noise figure at 881 MHz with 9.5 dB of gain and an IIP3 of +5 dBm.
The high-band SA1920 contains a receiver front-end, doubler and a high frequency transmit mixer intended for closed loop transmitters. One advantage of the high-band architecture is an image-rejection mixer with over 30 dB of image rejection; thus, eliminating external filter cost while saving board space. The system noise figure is 4.2 dB at 1960 MHz with a power gain of 23.5 dB and an IIP3 of 12.5 dB.