SA57608

Features: • Trimmed overvoltage trip point to within ±25 mV• Programmable overvoltage trip time delay• Trimmed undervoltage trip point to within ±25 mV• Very Low undervoltage quiescent sleep current 0.05 mA• Discharge overcurrent cutoff• Low operating current (1...

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SeekIC No. : 004483737 Detail

SA57608: Features: • Trimmed overvoltage trip point to within ±25 mV• Programmable overvoltage trip time delay• Trimmed undervoltage trip point to within ±25 mV• Very Low undervoltage...

floor Price/Ceiling Price

Part Number:
SA57608
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

• Trimmed overvoltage trip point to within ±25 mV
• Programmable overvoltage trip time delay
• Trimmed undervoltage trip point to within ±25 mV
• Very Low undervoltage quiescent sleep current 0.05 mA
• Discharge overcurrent cutoff
• Low operating current (10 A)
• 6-lead small outline package (SOP004)



Application

• Cellular phones
• Personal digital assistants
• Palmtop computers



Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER MIN. MAX. UNIT
VIN Input voltage 0.3 +12 V
VCF(max) CF pin voltage VCC 28 VCC + 0.3 V
VVM(max) VM pin voltage VCC 28 VCC + 0.3 V
Topr Operating ambient temperature range 40 +85
Tstg Storage temperature 40 +125
PD Power dissipation - 150 mW



Description

The SA57608 is a single-cell Li-ion protection IC, and is an improved version of the NE57600, with different pinout. Its over and under voltage accuracies are trimmed to within ± 25 mV (5%) over the entire battery pack operating temperature range. The SA57608 is available in various over and undervoltage limits.

There is a discharge overcurrent protection circuit, SA57608 can protect the battery pack against an accidental short-circuit. The overcharge trip point has a time delay which can be programmed externally. SA57608 is packaged in a space-saving 6-lead small outline package and requires two external N-channel MOSFETs and a minimum of passive parts.




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