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SB10150DC

Features: Schottky Barrier ChipGuard Ring Die Construction for Transient ProtectionLow Forward Voltage DropLow Power Loss, High EfficiencyHigh Surge Current CapabilityFor Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection ApplicationsPinout Specifications ...

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SB10150DC: Features: Schottky Barrier ChipGuard Ring Die Construction for Transient ProtectionLow Forward Voltage DropLow Power Loss, High EfficiencyHigh Surge Current CapabilityFor Use in Low Voltage, High Fr...

SB10150DC Data Sheet

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Part Number:
SB10150DC
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency Inverters,
Free Wheeling, and Polarity Protection Applications




Pinout






Specifications

Characteristic

 Symbol SB10150DC Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

150

V

RMS Reverse Voltage

VR(RMS)

105

V

Average Rectified Output Current @TC = 100°C

IO

10

A

Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)

IFSM

150

A

Forward Voltage @IF = 5.0A

VFM

0.92

V

Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C

IRM

0.5
50

mA

Typical Junction Capacitance (Note 1)

Cj

600

pF

Typical Thermal Resistance (Note 2)

RJC

3.0

°C/W

Operating and Storage Temperature Range

Tj, TSTG

-65 to +150

°C






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