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SBT5401F

Features: • high collector breakdown voltage : VCBO = -160V, VCEO = -150V• Low collector saturation voltage : VCE(sat)=-0.5V(MAX.)• Complementary pair with SBT5551FPinoutSpecifications Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -160 V Collec...

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SeekIC No. : 004485325 Detail

SBT5401F: Features: • high collector breakdown voltage : VCBO = -160V, VCEO = -150V• Low collector saturation voltage : VCE(sat)=-0.5V(MAX.)• Complementary pair with SBT5551FPinoutSpecificat...

SBT5401F Data Sheet

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Part Number:
SBT5401F
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

• high collector breakdown voltage : VCBO = -160V, VCEO = -150V
• Low collector saturation voltage : VCE(sat)=-0.5V(MAX.)
• Complementary pair with SBT5551F






Pinout






Specifications

Characteristic

 Symbol Ratings Unit
Collector-Base voltage VCBO -160 V
Collector-Emitter voltage VCEO -150 V
Emitter-base voltage VEBO -5 V
Collector current IC -600 mA
Collector dissipation PC* 200 mW
Junction temperature Tj 150 °C
Storage temperature Tstg -55~150 °C





Description

Bipolar transistors, SBT5401F  also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are called bipolar because they have two kinds of carriers (hole, electron)

• General purpose amplifier
• High voltage application






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