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SBT5551F

Features: • high collector breakdown voltage : VCBO = 180V, VCEO = 160V• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)• Complementary pair with SBT5401FPinoutSpecifications Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 180 V Collector-...

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SeekIC No. : 004485327 Detail

SBT5551F: Features: • high collector breakdown voltage : VCBO = 180V, VCEO = 160V• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)• Complementary pair with SBT5401FPinoutSpecification...

SBT5551F Data Sheet

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Part Number:
SBT5551F
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

• high collector breakdown voltage : VCBO = 180V, VCEO = 160V
• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)
• Complementary pair with SBT5401F






Pinout






Specifications

Characteristic

 Symbol Ratings Unit
Collector-Base voltage VCBO 180 V
Collector-Emitter voltage VCEO 160 V
Emitter-base voltage VEBO 6 V
Collector current IC 600 mA
Collector dissipation PC* 200 mW
Junction temperature Tj 150 °C
Storage temperature Tstg -55~150 °C





Description

Bipolar transistors,SBT5551F also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are called bipolar because they have two kinds of carriers (hole, electron)

• General purpose amplifier
• High voltage application






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