Features: • Fast rise and fall times (15ns typical with 3000pf load)• 2Amp peak drive current• 14ns max Propagation delay (BG going low)• Adaptive Non-overlapping Gate Drives provide shoot-through protection• Floating top drive switches up to 25V• Under-Voltage ...
SC1205: Features: • Fast rise and fall times (15ns typical with 3000pf load)• 2Amp peak drive current• 14ns max Propagation delay (BG going low)• Adaptive Non-overlapping Gate Drives...
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DescriptionThe SC1202CST-3.3TR is designed as one kind of 600mA low dropout posotive voltage regul...
• Fast rise and fall times (15ns typical with 3000pf load)
• 2Amp peak drive current
• 14ns max Propagation delay (BG going low)
• Adaptive Non-overlapping Gate Drives provide shoot-through protection
• Floating top drive switches up to 25V
• Under-Voltage lock-out
• Overtemperature protection
• Less than 10uA supply current when EN is low
• Low cost
• High Density sunchronous power supplies
• Motor Drives/Class-D amps/Half bridge drivers
• High frequency (to 1.2 MHz) operation allows use of small inductors and low cost caps in place of electrolytics
• Portable computers
• Battery powered applications

| Parameter | Symbol | Conditions | Maximum | Units |
| V CC Supply Voltage | VMAX5V | 7 | V | |
| BST to PGND | VMAXBST-PGND | 30 | V | |
| BST to GND | VMAXBST-DRN | 7 | V | |
| DRN to PGND | VMAXDRN-PGN | 25 | V | |
| OVP_S to PGND | VMAXOVP_S-PGND | 10 | V | |
| Input Pin | CO | -0.3 to 8.3 | V | |
| Continuous Power Dissipation | Pd | Tamb = 25°C, TJ = 125°C Tcase = 25°C, TJ = 125°C |
0.66 2.56 |
W |
| Thermal Resistance Junction to Case | V | 40 | °C/W | |
| Thermal Resistance Junction to Ambient | JA | 150 | °C/W | |
| Operating Temperature Range | TJ | 0 to +125 | °C | |
| Storage Temperature Range | TSTG | -65 to +150 | °C | |
| Lead Temperature (Soldering) 10 sec | TLEAD | 300 | °C |
The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power MOSFETs. Each driver is capable of driving a 3000pF load in 20ns rise/fall time and has a 20ns max propagation delay from input transition to the gate of the power FET's. An internal Overlap Protection Circuit prevents shoot-through from Vin to GND in the main switching and synchronous MOSFET's. The Overlap Protection circuit ensures the Bottom FET does not turn on until the Top FET source has reached a voltage low enough to prevent cross-conduction.
The high current drive capability (2A peak) allows fast switching, thus reducing switching losses at high (1MHz) PWM frequencies. The high voltage CMOS process allows operation from 5-25 Volts at top MOSFET drain, thus making SC1205 suitable for battery powered applications. Connecting Enable pin (EN) to logic low shuts down both drives and reduces operating current to less than 10uA.
An Under-Voltage-Lock-Out circuit is included to guarantee that both driver outputs are low when the 5V logic level is less than or equal to 4.4V (typ) at supply ramp up (4.35V at supply ramp down). An Internal temperature sensor shuts down all drives in the event of overtemperature. SC1205 is fabricated utilizing CMOS technology for low quiescent current. The SC1205 is offered in a standard SO-8 package.