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SD1012-03

Features: 175 MHz12.5 VoltsEfficiency 50%Common EmitterPOUT = 6 W Min.GP = 9 dB GainApplicationVHF MobileApplicationsPinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 36 V VCEO Collector-Emitter Voltage 18 V VCES C...

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SeekIC No. : 004486173 Detail

SD1012-03: Features: 175 MHz12.5 VoltsEfficiency 50%Common EmitterPOUT = 6 W Min.GP = 9 dB GainApplicationVHF MobileApplicationsPinoutSpecifications Symbol Parameter Value Unit VCBO C...

SD1012-03 Data Sheet

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Part Number:
SD1012-03
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

175 MHz
12.5 Volts
Efficiency 50%
Common Emitter
POUT = 6 W Min.
GP = 9 dB Gain


Application

VHF MobileApplications


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
VCBO
   Collector-Base Voltage
36
V
VCEO
   Collector-Emitter Voltage
18
V
VCES
   Collector-Emitter Voltage
36
V
VEBO
   Emitter-Base Voltage
4.0
V
IC
   Device Current
1.8
A
PDISS
   Power Dissipation (+25°C)
20
W
TJ
   Junction Temperature
+200
°C
TSTG
   Storage Temperature
-65 to +150
°C



Description

The SD1012-03 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications in the 36 175 MHz frequency range. Emitter ballasting is employed to achieve excellent ruggedness under severe load mismatch conditions.




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