SD1060

The SD1060 is designed as one kind of RF & microwave transistor device that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handing capability, high power gain.

Features of the SD1060 are:(1)class C transistor;(2)frequency: 400 MHz;(3)voltage: 28 V;(4)power out: 5.0 W;(5)power gain: 4.7 dB;(6)efficiency|: 45 %. The absolute maximum ratings of the SD1060 can be summarized as:(1)collector-base voltage: 65.0 V;(2)collector-emitter voltage: 40.0 V;(3)emitter-base voltage: 4.0 V;(4)collector current: 1.5 A;(5)storage temperature: -65 to +200 ;(6)junction temperature: +200 . If you want to know more information such as the electrical characteristics about the SD1060, please download the datasheet in www.seekic.com or www.chinaicmart.com.