MFG:Other Category:Other
Category: Other
MFG: Other
Description: The SD1100C04C is designed as one kind of N-channel enhancement-mode high voltage D-MOS power FETs device that can be use...
The SD1100C04C is designed as one kind of N-channel enhancement-mode high voltage D-MOS power FETs device that can be used in (1)Converters; (2)Power supplies; (3)Machine tool controls; (4)High power drives; (5)Medium traction applications.
Features of the SD1100C04C are:(1)Wide current range; (2)High voltage ratings up to 3200V; (3)High surge current capabilities; (4)Diffused junction; (5)Hockey Puk version; (6)Case style B-43.
The absolute maximum ratings of the SD1100C04C can be summarized as:(1)drain source voltage: 450 V;(2)gate-source voltage: +/-40 V;(3)peak pulsed drain current: 0.25 A;(4)maximum power dissipation: 0.5 to 6.88 W;(5)operating junction and storage temperature range: -55 to +150 ;(6)lead temperature (1/16" from mounting surface for 30 sec): +260 . If you want to know more information about the SD1100C04C, please download the datasheet in www.seekic.com or www.chinaicmart.com .
SD1100C04C
PDF/DataSheet Download
SD1100C..C, Standard Recovery Diodes (Hockey PUK Version), 1400 A
The SD1100 is designed as one kind of N-channel enhancement-mode high voltage D-MOS power FETs device that can be used in (1)motor controls;(2)line drivers;(3)power supplies. Features of the SD1100 are:(1)gate stand-off, +/-40 V min.;(2)P-channel complement...
INDUCTOR POWER SHIELD 0.47UH SMD
The SD10-R47 features: • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density• Inductance range from .47uH to 1000uH• Current range from 6.00 to 0.088 Amps• Ferrite shielded, low EMI
SWITCH DIP SPST SEALED 10POS SMD
Price: 1.98-2.8 USD
double high-side switch, two low-side switches, SOT-263, -0.3 to 42V, low quiescent current
Price: 50-100 USD
IGBT module, MOS input, N channel, Latch up free, 1200V, 800A, Low inductance case
Price: 0.0412-0.0508 USD
600W, surface mount, bidirectional transient voltage suppressor, 45V, 5%, DO-214AA/SMB
Price: 0.95-1.65 USD
CMOS, monolithic dual 8-bit, digital/analog converter, Buffered Multiplying DAC, SOP-20
Price: 0.1-0.2 USD
2-input AND gate, Pb-Free, 14-Lead TSSOP, CMOS
Price: 18-20 USD
NPN SILICON RF POWER TRANSISTOR BLW76 Philips
Price: 18-23 USD
Hybrid high dynamic range amplifier module, 24 V, SOT115J, 55 dBmV, Excellent linearity, Extremely...
Price: 1-1 USD
passivated assembled circuit element, 357A, 400 to 1200V, High dynamic characteristics
Price: 120-180 USD
MIG75Q7CSB1X MITSUBISHI High Power Switching Applications Motor Control Applications
Price: 400-1000 USD
IC FPGA, VIRTEX-4FX, 672FFBGA, Xilinx, Inc, ±200 mA, Boundary-Scan I/O Power Supply
Price: 52-60 USD
high Arm short circuit capability, high DC current gain, insulated type, GTR module, 400kHz
Price: 1.55-2.2 USD
RAMDAC, PLCC, 7.0V
