SD1100C04C

Series: -
Manufacturer: Vishay Semiconductors
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Mounting Type: Chassis Mount
Reverse Recovery Time (trr): -
Speed: Standard Recovery >500ns, > 200mA (Io)
Packaging: Bulk
Diode Configuration: Single
Current - Reverse Leakage @ Vr: 35mA @ 400V
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A
Current - Average Rectified (Io) (per Diode): 1400A
Package / Case: B-43, PUK
Supplier Device Package: B-43, Hockey PUK


Description

The SD1100C04C is designed as one kind of N-channel enhancement-mode high voltage D-MOS power FETs device that can be used in (1)Converters; (2)Power supplies; (3)Machine tool controls; (4)High power drives; (5)Medium traction applications.

Features of the SD1100C04C are:(1)Wide current range; (2)High voltage ratings up to 3200V; (3)High surge current capabilities; (4)Diffused junction; (5)Hockey Puk version; (6)Case style B-43.

The absolute maximum ratings of the SD1100C04C can be summarized as:(1)drain source voltage: 450 V;(2)gate-source voltage: +/-40 V;(3)peak pulsed drain current: 0.25 A;(4)maximum power dissipation: 0.5 to 6.88 W;(5)operating junction and storage temperature range: -55 to +150 ;(6)lead temperature (1/16" from mounting surface for 30 sec): +260 . If you want to know more information about the SD1100C04C, please download the datasheet in www.seekic.com or www.chinaicmart.com .