SD1132-5

The SD1132-5 is a 12.5V epitaxial silicon NPN planar transistor designed primarly for UHF predriver applications.Features of the SD1132-5 are:(1)FM class C transistor;(2)frequency is 470MHz;(3)voltage is 12.5V;(4)power out is 0.6W;(5)power gain is 13.0dB;(6)common emitter.

The absolute maximum ratings of the SD1132-5 can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage,the value is 36.0,the unit is V;(2):the symbol is VCEO,the parameter is collector-emitter voltage,the value is 18.0,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 4.0,the unit is V;(4):the symbol is VCES,the parameter is collector-emitter voltage,the value is 36.0,the unit is V;(5):the symbol is IC,the parameter is collector current(max.),the value is 0.7,the unit is A;(6):the symbol is PTOT,the parameter is total device dissipation at +25,the value is 2.5,the unit is W;(7):the symbol is TSTG,the parameter is storage temperature,the value is -65 to +150,the unit is ;(8):the symbol is TJ,the parameter is junction temperature,the value is +200,the unit is .

The electrical characteristics of the SD1132-5 can be summarized as:(1):the symbol is BVCBO,the test conditions is IC=10mA,IB=0,the value is 18.0,the unit is V;(2):the symbol is BVEBO,the test conditions is IE=5mA,IC=0,the value is 4.0,the unit is V;(3):the symbol is BVCES,the test conditions is IC=10mA,VBE=0,the value is 36.0,the unit is V;(4):the symbol is ICBO,the test conditions is VCB=12.5V,IE=0,the value is 1.0,the unit is mA;(5):the symbol is hFE,the test conditions is VCE=5.0V,IC=150A,the value is 20.0.