SD1137

DescriptionThe SD1137 is designed as one kind of N-channel enhancement-mode D-MOS power FETs device that can be used in (1)complementary voltage and current drivers;(2)line drivers;(3)pulse amplifiers;(4)solid-state relays. Features of the SD1137 are:(1)low threshold, VGS(th) 1.5V max;(2)low outp...

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SeekIC No. : 004486310 Detail

SD1137: DescriptionThe SD1137 is designed as one kind of N-channel enhancement-mode D-MOS power FETs device that can be used in (1)complementary voltage and current drivers;(2)line drivers;(3)pulse amplifie...

floor Price/Ceiling Price

Part Number:
SD1137
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Description

The SD1137 is designed as one kind of N-channel enhancement-mode D-MOS power FETs device that can be used in (1)complementary voltage and current drivers;(2)line drivers;(3)pulse amplifiers;(4)solid-state relays.

Features of the SD1137 are:(1)low threshold, VGS(th) 1.5V max;(2)low output and transfer capacitance;(3)entended safe operating area;(4)complementary P-channel drivers available.

The absolute maximum ratings of the SD1137 can be summarized as:(1)drain source voltage: 60 V;(2)gate-source voltage: +/-20 V;(3)peak pulsed drain current: +2.0 A;(4)continuous device dissipation: 0.3 or 1.0 W;(5)operating junction and storage temperature range: -55 to +150 ;(6)lead temperature (1/16" from mounting surface for 30 sec): +250 . If you want to know more information about the SD1137, please download the datasheet in www.seekic.com or www.chinaicmart.com .




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