DescriptionThe SD1137 is designed as one kind of N-channel enhancement-mode D-MOS power FETs device that can be used in (1)complementary voltage and current drivers;(2)line drivers;(3)pulse amplifiers;(4)solid-state relays. Features of the SD1137 are:(1)low threshold, VGS(th) 1.5V max;(2)low outp...
SD1137: DescriptionThe SD1137 is designed as one kind of N-channel enhancement-mode D-MOS power FETs device that can be used in (1)complementary voltage and current drivers;(2)line drivers;(3)pulse amplifie...
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The SD1137 is designed as one kind of N-channel enhancement-mode D-MOS power FETs device that can be used in (1)complementary voltage and current drivers;(2)line drivers;(3)pulse amplifiers;(4)solid-state relays.
Features of the SD1137 are:(1)low threshold, VGS(th) 1.5V max;(2)low output and transfer capacitance;(3)entended safe operating area;(4)complementary P-channel drivers available.
The absolute maximum ratings of the SD1137 can be summarized as:(1)drain source voltage: 60 V;(2)gate-source voltage: +/-20 V;(3)peak pulsed drain current: +2.0 A;(4)continuous device dissipation: 0.3 or 1.0 W;(5)operating junction and storage temperature range: -55 to +150 ;(6)lead temperature (1/16" from mounting surface for 30 sec): +250 . If you want to know more information about the SD1137, please download the datasheet in www.seekic.com or www.chinaicmart.com .