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SD1411

Application30 MHz40 VOLTSIMD -30 dBCOMMON EMITTERGOLD METALLIZATIONPOUT = 200 W MIN. WITH 16 dB GAINPinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage ...

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SeekIC No. : 004486332 Detail

SD1411: Application30 MHz40 VOLTSIMD -30 dBCOMMON EMITTERGOLD METALLIZATIONPOUT = 200 W MIN. WITH 16 dB GAINPinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Volta...

SD1411 Data Sheet

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Part Number:
SD1411
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/16

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Product Details

Description



Application

30 MHz
40 VOLTS
IMD -30 dB
COMMON EMITTER
GOLD METALLIZATION
POUT = 200 W MIN. WITH 16 dB GAIN


Pinout

Connection Diagram


Specifications

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

110

V

VCEO

Collector-Emitter Voltage

55

V

VEBO

Emitter-Base Voltage

4.0

V

IC

Device Current

40

A

PDISS

Power Dissipation

330

W

TJ

Junction Temperature

+200

°C

TSTG

Storage Temperature

- 65 to +150

°C




Description

The SD1411 is a silicon NPN transistor designed for telecommunications in HF and VHF frequency bands. This device utilizes gold metallized die with diffused emitter resistors to achieve high reliability and ruggedness.




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