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SD1414-12

Application960 MHz13.5 VOLTSCOMMON BASEPOUT = 40 WMIN. WITH 4.3 dB gainPinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 36 V VCEO Collector-Emitter Voltage 18 V VCES Collector-Emitter Voltage 36 V VEBO Em...

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SD1414-12: Application960 MHz13.5 VOLTSCOMMON BASEPOUT = 40 WMIN. WITH 4.3 dB gainPinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 36 V VCEO Co...

SD1414-12 Data Sheet

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Part Number:
SD1414-12
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

960 MHz
13.5 VOLTS
COMMON BASE
POUT = 40 WMIN. WITH 4.3 dB gain


Pinout

Connection Diagram


Specifications

 

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

36

V

VCEO

Collector-Emitter Voltage

18

V

VCES

Collector-Emitter Voltage

36

V

VEBO

Emitter-Base Voltage

4.0

V

IC

Device Current

9.0

A

PDISS

Power Dissipation

150

W

TJ

Max. Operating Junction Temperature

+200

°C

TSTG

Storage Temperature

- 65 to +150

°C



Description

The SD1414-12 is a 13.5 V Class C Epitaxial silicon NPN planar transistor designed for amplifier applications up to 960 MHz. Internal input matching and common base configuration assure optimum gain and efficiency in broad band applications.


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